According to the Ministry of Science and Technology's website, the "12th Five-Year Plan" national 863 plan advanced energy technology field "the use of domestic intelligent module energy storage system power electronics key technology research and development and application" theme project, in the insulated gate bipolar transistor (IGBT) intelligent module The key technologies of the power electronics of energy storage systems have made important progress. They have broken through a series of key technologies such as IGBT intelligent module design, control drive and protection, processes and tests, and have broken through the key technologies of power electronics in multi-energy energy storage systems. It is a domestic initiative. Leading the world. Recently, the project has passed the project acceptance of the High-tech Division of the Ministry of Science and Technology.
Based on the research and development of domestic intelligent power modules, long-standby, safe and reliable, high-efficiency disaster prevention power supply, developed a multi-energy energy storage system power electronic system design methods, including power electronics power conversion architecture program, multi-energy collaborative control, fault tolerance Technology and so on. In Zhangzhou Industrial Park, Fujian Province, the world's first demonstration system for emergency power applications for major projects including fuel cells, natural gas, and electric power was established.
The IGBT insulated gate bipolar transistor is a compound fully-controlled voltage-driven power semiconductor device composed of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), and has a high input impedance of the MOSFET and a low GTR. Turns on the advantages of pressure drop in two aspects. The GTR has lower saturation voltage, higher current density, but higher drive current. The MOSFET has low drive power and fast switching speed, but has large turn-on voltage drop and low current density. IGBTs combine the advantages of the above two devices, with low drive power and reduced saturation pressure. It is very suitable for converter systems with DC voltages of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, and traction drives.
According to the “2017-2022 China IGBT Power Module Market In-Depth Survey and Investment Prospects Report†published by Booz Data, China’s IGBT industry has made great progress since its development. Although it still needs a lot of imports, some companies have already achieved scale. Production capacity. In 2010, the output of IGBT power electrical modules in China was 1.9 million, which increased to 4.98 million in 2015.
CSC believes that the biggest driving force for the future growth of IGBTs comes from the new energy automotive industry chain. It is estimated that from 2017 to 2020, the IGBT market scale driven by new energy vehicles will reach 103.4 billion yuan, and the IGBT market scale driven by charging piles will reach 20 billion yuan, a total of 120 billion yuan in the market. The relevant targets are: BYD (002594.SZ), Silan Micro (600460.SH) and China CRRC (601766.SH).
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