Recently, the international magazine Semiconductor Today special article reported on the latest achievements in the development of the “ultra-low resistance†bonding process between Sony Corporation of Japan and the Suzhou Institute of Nanotechnology and Nanobionics of the Chinese Academy of Sciences. The heavily doped P+ type GaAs and n+ type InP bonding materials grown based on molecular beam epitaxy avoid the diode rectification characteristics caused by n-type GaAs and n-type InP bonding.
By low energy argon plasma bonding interface treatment, high mechanical strength room temperature bonding is achieved in a high vacuum (<10-5 Pa) bonding environment. The room-temperature bonding process also solves structural defects such as wafer bending, defects, voids, and cracks caused by conventional high-temperature bonding (400-700° C.), and its bonding interface resistance is lower than 2.5×10 −5 cm 2 [Appl.Phys. Express, 7, 112301, 2014]. The development of an ultra-low resistance bonding process provides key technical support for the preparation and application of ultra-high-power four-junction high-efficiency solar cells.
Using this technology, based on the photocurrent matching battery design, the Sony team of the Suzhou Nanotechnology Institute realized a GaInP/GaAs/InGaAsP/InGaAs four-junction prototype device based on full molecular beam epitaxy, achieving 42% at 50X spotlight. Photoelectric conversion efficiency (Japan AIST test results).
Next, the preparation of high-power condenser batteries is expected to achieve a higher efficiency breakthrough. In addition, the breakthrough in the low growth temperature and the molecular beam epitaxial growth problem of high saturated vapor pressure phosphides achieve a stable and high performance MBE growth of the quaternary compound InGaAsP with a bandgap energy of 1.0 eV. The InGaAsP cell efficiency is over 18% [Solar Energy Materials & Solar Cells 127, 1-5 (2014)]; Optimized InP-based device process to achieve 12% of InGaAs single-junction cell photoelectric conversion [Appl.Phys.Express7, 096601 (2014)]. The transparent conductive film was applied to a GaAs battery, achieving a photoelectric conversion efficiency of 25.6% [PCT/JP2012/072330, PCT/JP2012/072331], which is the highest reported for the same type of battery efficiency.
The above work has received strong support from the National Natural Science Foundation of China, the Chinese Academy of Sciences and the President of the Suzhou Nanometer Institute.
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