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The Shanghai Institute of Ceramics and the Institute of Semiconductors of the Chinese Academy of Sciences, through joint research, have made breakthroughs in the core technologies involved in the SiC-LED technology line, such as SiC single crystal substrates, epitaxy, chips, and luminaire packaging. Developed a variety of structure of SiC-LED, and packaged into a lamp, fully opened the SiC-LED technology line, for the promotion of SiC-LED technology in the semiconductor lighting industry laid the foundation.
Semiconductor lighting is a solid-state lighting based on a new LED light source and is considered the third technological revolution in lighting. Substrate material is the basis of semiconductor lighting industry technology development, different substrate materials determine the LED epitaxial growth technology, chip processing technology and device packaging technology.
Therefore, the substrate material determines the development path of semiconductor lighting technology. The substrate materials currently used for LEDs mainly include sapphire, silicon carbide (SiC), silicon, and metal substrates. The sapphire-based LED production technology is the most mature and dominates the entire semiconductor lighting industry. However, due to the nature of sapphire materials, its application in high-efficiency, high-power LEDs is limited.
The lattice constant and thermal expansion coefficient of the SiC single crystal substrate material are closer to that of the GaN material, and the lattice mismatch rate is only 3.5%. In addition, the good electrical and thermal conductivity performance can solve the high light efficiency, high power LED devices. The heat problem. At present, Cree Corporation in the United States widely uses SiC substrate materials to produce high-efficiency, high-power LEDs, and occupies a dominant position in the high-end LED market. At present, China has not adopted the SiC-LED technology route for enterprises. On the one hand, the SiC substrate processing is more expensive than the sapphire substrate. On the other hand, the SiC-LED core technology is mainly controlled by the United States Cree.
Shanghai Silicate is the first unit to develop SiC single crystal materials in China. After more than ten years of accumulation, it has conquered a series of key technologies for large-size, high-quality SiC single-crystal substrate materials in Shanghai Silicate Institute. The test base (high-tech enterprise) formed a production line for mass production of SiC single crystal substrates. Relying on one of the country’s most advanced innovative R&D platforms, namely the “Industrial Lighting Research and Development Center of the Chinese Academy of Sciences†of the Semiconductor Institute, Shanghai Silicate Institute and Semiconductor Lighting R&D Center will exert their respective advantages and will continue to conduct innovative research in SiC-LED technology. Invigorate the development of China's SiC industry.
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